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| AOU413 P-Channel Enhancement Mode Field Effect Transistor General Description The AOU413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard Product AOU413 is Pb-free (meets ROHS & Sony 259 specifications). AOU413L is a Green Product ordering option. AOU413 and AOU413L are electrically identical. TO-251 Features VDS (V) = -40V ID = -12A (VGS = -10V) RDS(ON) < 45m (VGS = -10V) RDS(ON) < 69m (VGS = -4.5V) D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25C Power Dissipation B TC=100C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Case C Steady-State Steady-State C Maximum -40 20 -12 -12 -30 -12 30 50 25 -55 to 175 Units V V A A mJ W C TA=25C G TA=100C G ID IDM IAR EAR PD TJ, TSTG Symbol RJA RJL Typ 40 2.5 Max 50 3 Units C/W C/W Alpha & Omega Semiconductor, Ltd. AOU413 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-32V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-12A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, I D=-8A Forward Transconductance VDS=-5V, ID=-12A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C -1 -30 36 56 51 16 -0.75 -1 -12 657 VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 143 63 6.5 14.1 VGS=-10V, VDS=-20V, ID=-12A 7 2.2 4.1 8 VGS=-10V, VDS=-20V, RL=1.7, RGEN=3 IF=-12A, dI/dt=100A/s 12.2 24 12.5 23.2 18.2 45 70 69 -1.9 Min -40 -1 -5 100 -3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/s A: The value of R qJA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. Rev 1 : Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOU413 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -10V 25 -6V 20 -ID (A) 15 -3.5V 10 VGS=-3V 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 70 Normalized On-Resistance 65 60 RDS(ON) (m) 55 50 45 40 35 30 0 5 10 15 20 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 150 135 120 RDS(ON) (m) 105 90 75 60 45 30 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 1.0E-04 25C 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 125C -IS (A) 1.0E-02 1.0E-03 ID=-12A 1.0E-01 1.0E+01 1.0E+00 VGS=-10V VGS=-4.5V 1.80 1.60 1.40 1.20 1.00 0.80 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=-10V ID=-12A 5 25C 0 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics -ID(A) 15 -5V -4.5V 20 -4V 25 VDS=-5V 10 125C VGS=-4.5V ID=-8A 125C Alpha & Omega Semiconductor, Ltd. AOU413 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 VDS=-15V ID=-12A Capacitance (pF) 750 1000 8 -VGS (Volts) Ciss 6 500 Coss 250 Crss 4 2 0 0 3 6 9 12 15 0 10 20 30 40 -VDS (Volts) Figure 8: Capacitance Characteristics 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 TJ(Max)=175C, TA=25C RDS(ON) limited 10s 1ms Power (W) 120 80 40 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 100 100s 10ms 1.0 DC 200 160 TJ(Max)=175C TA=25C -ID (Amps) 10.0 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=3C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton Single Pulse 0.01 0.00001 T 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOU413 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 14 -ID(A), Peak Avalanche Current 60 12 Power Dissipation (W) tA = L ID BV - VDD 50 40 30 20 10 0 10 8 TA=25C 6 0.00001 0.0001 0.001 0 25 50 75 100 125 150 175 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability TCASE (C) Figure 13: Power De-rating (Note B) 14 12 Current rating -ID(A) 10 8 6 4 2 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. |
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